Optimization of RF MEMS Based Anti-biased Varactor Using Regressor Model
摘要
This paper outlines the design and Radio Frequency (RF) performance comparison of both a traditional and an anti-biased RF Micro Electro Mechanical System (MEMS) Varactor. The anti-biased configuration is implemented for RF MEMS Varactor in a shunt arrangement. Through High Frequency Structure Simulator (HFSS) simulations, the RF performance of the anti-biased varactor is studied. The results demonstrate that the anti-biased varactor exhibits superior RF characteristics, whereas the position of the varactor determines isolation loss. Improvements in Isolation loss could be done using time consuming Electro Magnetic (EM) tools. Such a laborious process can be reduced using regressor models such as eXtreme Gradient boosting algorithms (XG-Boost). The objective of this study is to enhance RF performance by modifying physical parameters such as position (p) and frequency (f) using the XG-Boost technique, focusing on improving insertion loss (S21) and return loss (S11). Through the implementation of the XG-Boost method, varactor design time is drastically reduced by 72.73% compared to conventional EM simulators, which typically consume around 110 min on an Intel-Core (2.4 GHz) CPU equipped with 8 GB of RAM.