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In this work, a detailed study on the wet anisotropic etching of Silicon (Si){100} is carried out in pure and surfactant-added 9% ammonium hydroxide (NH4OH). Here, Triton 100-X (C14H22O(C2H4O)n, n = 9 to 10) is utilized as the surfactant, whose concentration is varied from 1 to 1000 ppm. Silicon dioxide (SiO2) thin film served as the masking material for Si selective etching. The etching characteristics (such as etch rate, undercutting at the convex corner, and average surface roughness) and the features of the etched structures are investigated in pure NH4OH as well as NH4OH with varied surfactant concentrations. The values of the stated etching characteristics are derived to be relatively high in pure NH4OH, whereas these values are significantly reduced with the addition of the surfactant, and the lowest values are attained in NH4OH with surfactant of 1000 ppm. The reasonable etch rate and undercutting at the convex corner with relatively low surface roughness are accomplished in NH4OH with surfactant of 1 ppm.

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A Study on Wet Anisotropic Etching of Si{100} in NH4OH Based Solutions: The Effect of Surfactant Concentration on the Etching Characteristics

  • 会议论文

  • 发表日期：

    2025年

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  • Priyanka Dewangan,
  • Vishal Sahu,
  • Robbi Vivek Vardhan,
  • Mahesh Peddigari,
  • Prem Pal

摘要

In this work, a detailed study on the wet anisotropic etching of Silicon (Si){100} is carried out in pure and surfactant-added 9% ammonium hydroxide (NH4OH). Here, Triton 100-X (C14H22O(C2H4O)n, n = 9 to 10) is utilized as the surfactant, whose concentration is varied from 1 to 1000 ppm. Silicon dioxide (SiO2) thin film served as the masking material for Si selective etching. The etching characteristics (such as etch rate, undercutting at the convex corner, and average surface roughness) and the features of the etched structures are investigated in pure NH4OH as well as NH4OH with varied surfactant concentrations. The values of the stated etching characteristics are derived to be relatively high in pure NH4OH, whereas these values are significantly reduced with the addition of the surfactant, and the lowest values are attained in NH4OH with surfactant of 1000 ppm. The reasonable etch rate and undercutting at the convex corner with relatively low surface roughness are accomplished in NH4OH with surfactant of 1 ppm.