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In this contribution, a low-cost process is developed to fabricate microchannels in Borofloat glass wafers through wet bulk micromachining using DC-sputtered Cr thin film along with positive photoresist (AZ1512HS) as the masking layer. Here, Cr thin films of 100 and 200 nm thicknesses are deposited at room temperature as well as 450 °C on the glass wafers. The masking layer containing Cr thin film (irrespective of its thickness) deposited at 450 °C shows better sustainability in a 15% hydrofluoric acid (HF) solution than the masking layer with Cr thin film deposited at room temperature. A maximum etch depth of ~132 µm with sharp-edged microchannels is attained in the glass wafer, which comprises 200 nm Cr thin film (deposited at 450 °C) with photoresist as the masking layer. Furthermore, the glass wafer is free from surface defects. Here, the attained underetch ratio is 1, which is due to isotropic etching of glass and it also confirms the excellent adhesion of the masking layer with the glass wafer.

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Fabrication of Microchannels in Borofloat Glass Wafer Using Low-Cost Wet Bulk Micromachining

  • 会议论文

  • 发表日期：

    2025年

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  • Vishal Sahu,
  • Priyanka Dewangan,
  • Robbi Vivek Vardhan,
  • Prem Pal

摘要

In this contribution, a low-cost process is developed to fabricate microchannels in Borofloat glass wafers through wet bulk micromachining using DC-sputtered Cr thin film along with positive photoresist (AZ1512HS) as the masking layer. Here, Cr thin films of 100 and 200 nm thicknesses are deposited at room temperature as well as 450 °C on the glass wafers. The masking layer containing Cr thin film (irrespective of its thickness) deposited at 450 °C shows better sustainability in a 15% hydrofluoric acid (HF) solution than the masking layer with Cr thin film deposited at room temperature. A maximum etch depth of ~132 µm with sharp-edged microchannels is attained in the glass wafer, which comprises 200 nm Cr thin film (deposited at 450 °C) with photoresist as the masking layer. Furthermore, the glass wafer is free from surface defects. Here, the attained underetch ratio is 1, which is due to isotropic etching of glass and it also confirms the excellent adhesion of the masking layer with the glass wafer.