In view of technology characteristic of Continuously Variable Phosphorous Getting Process Using a Porous Silicon Layer (PSL-CVTPDG), a prediction model based on Artificial Neural Network(ANN) is put forward for predicting effect of PSL-CVTPDG process. Establish, train, test and verify as long as simulation of the prediction model were finished by means of ANN function in MATLAB. Experimental results show that the prediction and actually measured values are very close to, the output follows the tracks of the expectation value very well, which reflects that the ANN is an effective method for predicting the gettering effect of porous silicon materials.