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Californium source have advantages such as low cost, miniaturization and sufficient usable time, the effectiveness of Californium source as a substitute for heavy ions in the single event effects study and evaluation of SiC power electronic devices needs further clarification. And based on auxiliary circuits to achieve single event effects hardening without changing the device structure can also be one of the effective alternatives. Single event burnout (SEB) and hardening design of SiC MOSFETs with 900-V rated voltage under Californium source irradiation were studied. Under 500-V drain bias voltage, SEB induced by Californium source fission fragments was accompanied by transient pulse current of ampere magnitude. After SEB occurred, the output characteristics and transfer characteristics of SiC MOSFET were degraded, the gate current and on resistance were increased, and breakdown characteristics was completely lost. Combined with the 3 MΩ protection resistance and SEB test circuit, a protection circuit based on high resistance was designed. The protection circuit realized 36 times protection of SEB under 500-V bias voltage, and the protective action comes from the rapid transfer of drain bias voltage during SEB. The external circuit structure was proposed to realize the SEB protection, which provides a certain reference for the single event effect hardening of SiC device.

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Research and Hardening Exploration on Single Event Burnout of 900-V SiC MOSFET Based on Californium Source

  • 会议论文

  • 发表日期：

    2025年

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  • Hong Zhang,
  • Teng Ma

摘要

Californium source have advantages such as low cost, miniaturization and sufficient usable time, the effectiveness of Californium source as a substitute for heavy ions in the single event effects study and evaluation of SiC power electronic devices needs further clarification. And based on auxiliary circuits to achieve single event effects hardening without changing the device structure can also be one of the effective alternatives. Single event burnout (SEB) and hardening design of SiC MOSFETs with 900-V rated voltage under Californium source irradiation were studied. Under 500-V drain bias voltage, SEB induced by Californium source fission fragments was accompanied by transient pulse current of ampere magnitude. After SEB occurred, the output characteristics and transfer characteristics of SiC MOSFET were degraded, the gate current and on resistance were increased, and breakdown characteristics was completely lost. Combined with the 3 MΩ protection resistance and SEB test circuit, a protection circuit based on high resistance was designed. The protection circuit realized 36 times protection of SEB under 500-V bias voltage, and the protective action comes from the rapid transfer of drain bias voltage during SEB. The external circuit structure was proposed to realize the SEB protection, which provides a certain reference for the single event effect hardening of SiC device.