This paper represents the performance analysis of 6 nm single-gate (SG) and double-gate (DG) MOSFETs configurations with Indium Gallium Arsenide (InGaAs) and Hafnium Oxide (HfO2). The performance has been evaluated with regards to leakage current (IOFF), drive current (ION), DIBL, SS and threshold voltages (VTH). At 0.7 V drain voltage, SG-MOSFET exhibits 3.24 × 10–4 A/µm drive current (ION) and 8.52 × 10–7 A/µm leakage current (IOFF). DG-MOSFET, operating at 0.39 V threshold voltage, shows 4.9 × 10–3 A/µm drive current and 4.09 × 10–10 A/µm leakage current. An inverter, NAND and NOR gate circuit are developed as applications for both single-gate and double-gate devices with their performance. Average power consumption for SG and DG-MOSFET-based circuits is 0.9 µW, 0.15 µW, and 0.41 µW for inverter, NAND and NOR gates in SG-MOSFET, while it's 0.07 µW, 0.14 µW, and 0.25 µW in DG-MOSFET, respectively. DG-MOSFET shows superior efficiency with lower power consumption, higher ION, reduced IOFF and operating at lower threshold voltages. The reduced power consumption and efficient operation enable minimal frequency usage, reducing radiation exposure from human body. The circuit level applications and the devices is adding more layer of hardware-based security which are useful, especially for the societal communications through hand-held devices.