Improved Ion/Ioff and Drain Current Ratio of Hafnium-Based Biological Field-Effect Transistor Compared with Different Gate Oxide for Better Performances in Low-Power Applications
摘要
This tutorial provides a comprehensive exploration of the impact of various dielectrics on the performance of biological field-effect transistors (BioFETs). This paper provides an overview of BioFETs, highlighting fundamental physics of total acceptor trap density, total donor trap density, subthreshold voltage, threshold voltage, and dielectric-modulated transduction. The effects of device rationalization on transistor performance have been noted, and the following level of advancements in BioFET has been examined. Following that, various BioFET designs for performance optimization were investigated using multiple dielectrics such as Al2O3, Ta2O5, TiO2, SiO2, HfO2, and ZrO2. In this connection, the relative merits/demerits of such emergent versions of different dielectric types are stated. For general readers with diverse dielectrics, the discussion sought to express a strong grasp of biosensors-based BioFET. Interested academics, the current research setting, upcoming talents, and investigating problems in this topic are thoroughly discussed. BioFETs produce a reasonably low subthreshold voltage level and a reasonable threshold voltage when compared to the other BioFET models. As a minimum Ion/Ioff current ratio of 106 is attained in all BioFET designs. To verify the accuracy of the resulting model, by using TCAD, analytical results are compared to equivalent simulated data.