This work is mainly devoted to the Atomic Layer Deposition (ALD) technique and its use in the fabrication of TMD-based optoelectronic devices. By providing a brief introduction to ALD and prior fabricated TMD-based devices. Including types of ALD precursors, growth characteristic, surface roughness, conformality, and effect of deposition temperature, in addition to theses the mechanics of thermal ALD is also discussed with the descriptions of the initial surface reactions, reaction pathway process, and precursor chemisorptions. Moreover, ALD application on TMD materials is also discussed in a section by describing the key surface properties of 2D TMDs, and the physisorption impact on ALD uniform film deposition of 2D TMDs. Such as the ALD on 2D TMDs without any surface treatment and uniform deposition by surface functionalization. Moreover, a separate segment also discussed a few significant TMD materials fabricated from ALD, like MoS2, MoSe2, WS2, WSe2, HfS2, and ReS2 including a miscellaneous topic. Additionally, in a separate segment, some important TMD-based ALD process fabricated devices are also discussed by providing their key physical characteristics with other advancements in devices. Such as ALD fabricated TMD-based photodetector and Field Effect Transistor (FET) (HfS2 FETs and WS2 FETs) devices and their critical working performances including significant physical characteristics.