To explore vivid aspects of TMDs materials, this work describes the different dimensions of the topological insulating (TI) behavior of TMDs. By providing a sound back ground discussion including bulk TMD topological aspects such as Berry curvature and Chern invariance, Chern for the insulator, topological protection of transport properties, TIs Dirac systems, and Hamiltonians and kinetics. A detail description is also devoted to monolayer TMD topological properties, including a description of binary and ternary compositions of topological insulating materials. Moreover, a description of the crystal structures of TIs is also incorporated including a theoretical aspect of monolayer TIs crystal structure and experimental aspects by providing the concepts of the wrinkled folded and scrolled TMDs. A general description on TIs band structure in a normal state has been also provided. Additionally, a description of Ising superconductivity in monolayer TIs is also provided by discussing Type-I, and Type-II including a theoretical aspect. A description of nodal topological phase and aging effects (including edge states transport of 2D of TIs and impact of topological edge states on optoelectronic properties) has been also provided. Furthermore, a general discussion has also included on various topics of the TIs such as cracking, carrier density, structural quality of thin films, choice of substrate and heterostructures, and superlattices.