In the smart distribution grid with high power electronics penetration, crosstalk suppression via SiC MOSFET gate driver parameter design is critical for safe and reliable operation. However, existing methods for this purpose often increase switching losses and reduce switching speed, making it challenging to achieve the coordinated optimization of crosstalk, switching speed, and losses. This paper analyzes SiC MOSFET switching characteristics, establishes a gate drive parameter optimization model, and adopts a multi-objective particle swarm optimization design method to achieve coordinated optimization of the device’s switching speed, losses and crosstalk voltage. Finally, experimental validations confirm the effectiveness of the proposed method.