Compared with Si materials, SiC materials demonstrate significant advantages in multiple aspects, including high thermal conductivity, a high breakdown electric field, and a wide bandgap. As a result, SiC MOSFETs are strongly favored in high-power and high-temperature applications. However, unlike Si MOSFETs, SiC MOSFETs require specially designed drive circuits. Resonant drive circuits offer benefits such as low driving loss, high switching frequency, reduced switching losses, and effective voltage clamping. This paper presents a method for processing the PWM signals of target SiC MOSFETs to generate control signals for the four MOSFETs in an H-bridge. The simulation uses gate-level circuits, while physical experiments employ an FPGA programmed with logic operations, offering flexibility in modifying control sequences and adjusting delay parameters. Both simulations and experiments revealed excessive voltage overshoot of Vgs in the resonant drive circuits, which poses potential risks of device damage. This study proposes a novel control sequence for the H-bridge MOSFETs and develops a new RLC series resonant driving method during the turn-on process to suppress the voltage overshoot of Vgs. Results from LTspice simulations and physical double-pulse tests confirm that the proposed sequence achieves significantly lower switching losses compared to direct driving, while also demonstrating notable suppression of voltage overshoot.