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This study proposes a three-terminal self-biased channel diode (SBCD) with a Fin-based split-gate (SG) structure as a low-loss, low-cost alternative to Schottky barrier diodes in power supplies and solar cells. The proposed SBCD prevents thermal runaway and addresses trade-offs between on-voltage, breakdown voltage, and reverse recovery loss. To enhance switching performance, a vertical Fin structure with an SG electrode was introduced to increase gate capacitance. Device simulations were conducted with various SG heights (0.6–1.4 μm) and unit sizes (5–15 μm). The device’s characteristics varied depending on the SG connection: anode shorted, floating, or grounded. Notably, when the SG was shorted to the anode, reverse recovery time (trr) and charge (Qrr) improved by 77% and 52%, respectively, at 5 μm unit size, reducing dynamic loss by ~ 38% compared to conventional Fin SBCD. These results indicate the SG Fin structure is promising for high-speed, low-loss power devices. Further analysis will be provided in the full paper.

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Study on the Electrical Characteristics of Vertical Self-Biased Channel Diode with a Split-Gate Electrode in a Fin Structure

  • 会议论文

  • 发表日期：

    2026年

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  • Tsugutomo Kudoh,
  • Masashi Kobayashi

摘要

This study proposes a three-terminal self-biased channel diode (SBCD) with a Fin-based split-gate (SG) structure as a low-loss, low-cost alternative to Schottky barrier diodes in power supplies and solar cells. The proposed SBCD prevents thermal runaway and addresses trade-offs between on-voltage, breakdown voltage, and reverse recovery loss. To enhance switching performance, a vertical Fin structure with an SG electrode was introduced to increase gate capacitance. Device simulations were conducted with various SG heights (0.6–1.4 μm) and unit sizes (5–15 μm). The device’s characteristics varied depending on the SG connection: anode shorted, floating, or grounded. Notably, when the SG was shorted to the anode, reverse recovery time (trr) and charge (Qrr) improved by 77% and 52%, respectively, at 5 μm unit size, reducing dynamic loss by ~ 38% compared to conventional Fin SBCD. These results indicate the SG Fin structure is promising for high-speed, low-loss power devices. Further analysis will be provided in the full paper.