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Medium-pressure RF biased inductively coupled plasma (RF biased-ICP) holds significant promise for efficient material surface treatment, yet research in this area is rare limited by experimental challenges and the complexity of modeling. This paper develops a computational model for RF biased-ICP at medium pressure, to investigate the effects of RF bias on Ar plasma. The results show that RF bias creates a strong electric potential gradient near the biased electrode, forming a low-density region with high electron temperature. At 15 Pa and 150 Pa, the thickness of the low-density region is approximately 5 mm and 3 mm, respectively. At 150 Pa, the local electron temperature can reach 7.8 eV, raising the average electron temperature from 1.9 eV to 2.8 eV. These findings provide a foundation for efficient material processing using medium-pressure plasma.

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Modeling Study on Effect of RF Bias on Inductively Coupled Plasma at Medium Pressure

  • 会议论文

  • 发表日期：

    2026年

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  • Zhijun Ai,
  • Zhicheng Wu,
  • Qingzhe Zhu,
  • Zhengjie An,
  • Qiaogen Zhang

摘要

Medium-pressure RF biased inductively coupled plasma (RF biased-ICP) holds significant promise for efficient material surface treatment, yet research in this area is rare limited by experimental challenges and the complexity of modeling. This paper develops a computational model for RF biased-ICP at medium pressure, to investigate the effects of RF bias on Ar plasma. The results show that RF bias creates a strong electric potential gradient near the biased electrode, forming a low-density region with high electron temperature. At 15 Pa and 150 Pa, the thickness of the low-density region is approximately 5 mm and 3 mm, respectively. At 150 Pa, the local electron temperature can reach 7.8 eV, raising the average electron temperature from 1.9 eV to 2.8 eV. These findings provide a foundation for efficient material processing using medium-pressure plasma.