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To investigate the total dose radiation effects of the secondary-side driving protection circuit in ultra-high voltage IGBT drivers for power electronics, a 60Co γ total dose radiation experiment was conducted on the ET01 device unit of the RQD2001 IGBT secondary-side driver fabricated by 0.18 μm BCD technology. Experimental results demonstrate that the ET01 device unit with 0.18 μm BCD process for IGBT secondary-side drivers exhibits significant sensitivity to total dose radiation. By characterizing the transfer and output characteristic curves under varying total dose radiation conditions, and combining with device structure analysis, the damage mechanism of the ET01 device unit was elucidated. It is confirmed that radiation-induced interface effects, oxide trapped charges, and interface trapped charges are the primary causes of device degradation, leading to negative shift of threshold voltage and bidirectional drift of breakdown voltage. This study provides critical insights for researching radiation damage effects of 0.18 μm BCD process device units in the RQD2001 secondary-side circuit of domestic ultra-high voltage IGBT drivers for power electronics applications.

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Research on Radiation-Sensitive Parameters of Secondary Side Drive Protection Circuit for Extra-High Voltage IGBT Drivers in Power Electronics and Radiation Damage Effects of Its 0.18 μm BCD Process Device Units

  • 会议论文

  • 发表日期：

    2026年

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  • Gang Liu,
  • Ming-Xin Gao,
  • Ji-Hao Chen,
  • Hang-Yu Xu

摘要

To investigate the total dose radiation effects of the secondary-side driving protection circuit in ultra-high voltage IGBT drivers for power electronics, a 60Co γ total dose radiation experiment was conducted on the ET01 device unit of the RQD2001 IGBT secondary-side driver fabricated by 0.18 μm BCD technology. Experimental results demonstrate that the ET01 device unit with 0.18 μm BCD process for IGBT secondary-side drivers exhibits significant sensitivity to total dose radiation. By characterizing the transfer and output characteristic curves under varying total dose radiation conditions, and combining with device structure analysis, the damage mechanism of the ET01 device unit was elucidated. It is confirmed that radiation-induced interface effects, oxide trapped charges, and interface trapped charges are the primary causes of device degradation, leading to negative shift of threshold voltage and bidirectional drift of breakdown voltage. This study provides critical insights for researching radiation damage effects of 0.18 μm BCD process device units in the RQD2001 secondary-side circuit of domestic ultra-high voltage IGBT drivers for power electronics applications.