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As a third-generation semiconductor material, SiC exhibits broad application prospects in energy storage and new energy vehicles due to its high-frequency and high-temperature operating characteristics. To address the problem of high parasitic inductance caused by traditional aluminum bonding wires, this paper designs an integrated SiC power module based on Cu clip interconnects. A Cu clip parasitic inductance estimation model is established, and the parasitic inductance characteristics of the power circuit are studied through simulation. The fatigue life of the interconnect structure under power cycling is predicted. The results show that the power circuit parasitic inductance of the proposed power module is significantly reduced to 6.21 nH. Fatigue life analysis shows that the Cu clip life reaches 4337 cycles, while the aluminum bonding wire life is only 211 cycles, becoming a bottleneck in module reliability. This study achieves ultra-low parasitic inductance through a Cu clip structure and a mutual inductance cancellation layout. It also reveals the significant advantages of Cu clips in improving electrothermal reliability, providing an effective solution for the design of high-reliability SiC power modules.

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Low-Inductance Design and Lifetime Prediction of SiC Power Module Based on Cu-Clip

  • 会议论文

  • 发表日期：

    2026年

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  • Shunqi Wang,
  • Kailin Pan,
  • Qingli Mo,
  • Nianbin Cheng

摘要

As a third-generation semiconductor material, SiC exhibits broad application prospects in energy storage and new energy vehicles due to its high-frequency and high-temperature operating characteristics. To address the problem of high parasitic inductance caused by traditional aluminum bonding wires, this paper designs an integrated SiC power module based on Cu clip interconnects. A Cu clip parasitic inductance estimation model is established, and the parasitic inductance characteristics of the power circuit are studied through simulation. The fatigue life of the interconnect structure under power cycling is predicted. The results show that the power circuit parasitic inductance of the proposed power module is significantly reduced to 6.21 nH. Fatigue life analysis shows that the Cu clip life reaches 4337 cycles, while the aluminum bonding wire life is only 211 cycles, becoming a bottleneck in module reliability. This study achieves ultra-low parasitic inductance through a Cu clip structure and a mutual inductance cancellation layout. It also reveals the significant advantages of Cu clips in improving electrothermal reliability, providing an effective solution for the design of high-reliability SiC power modules.