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Semiconductor scaling faces fundamental limits with conventional architectures, driving the development of gate-all-around (GAA) nanosheet transistors for sub-3 nm nodes. These devices offer superior electrostatic control through vertically stacked channels, enhanced transconductance efficiency with \(g_m/g_{ds}\) ratios exceeding \(100\, \mathrm {V^{-1}}\) , and improved short-channel suppression with DIBL below \(20\, \mathrm {mV/V}\) , making them optimal for RF applications requiring low noise, high gain, and power efficiency in 5G/6G and IoT systems. This work presents a source-degenerated low noise amplifier (LNA) utilizing nanosheet technology, incorporating physics-based modeling with quantum confinement effects, nanosheet-specific noise parameters with reduced channel noise factor ( \(\gamma = 0.45\) versus 0.67 conventional), rigorous small-signal analysis, multi-objective optimization, and Monte Carlo statistical analysis across process variations including threshold voltage ( \(\pm 15\, \textrm{mV}\) ) and mobility ( \(\pm 8\%\) ) fluctuations. Results demonstrate significant achievements with the optimized nanosheet LNA achieving \(0.9\, \textrm{dB}\) minimum noise figure at \(2.4\, \textrm{GHz}\) , \(22\, \textrm{dB}\) voltage gain through enhanced transconductance, \(1.5\, \textrm{mW}\) power consumption enabling 35–45% reduction versus conventional designs, and optimized input matching with \(S_{11} < -15\, \textrm{dB}\) across 1– \(6\, \textrm{GHz}\) bandwidth through precise source degeneration design, with robust yield exceeding 95% across process variations. These improvements enable substantial RF circuit enhancements, particularly benefiting power-efficient applications including extended operational lifetime in wireless sensors, improved energy efficiency in 5G/6G base stations, enhanced energy-harvesting IoT devices, and reduced consumption in medical communication systems, while the systematic methodology provides an accessible framework for academic and industrial implementation. Advanced nanosheet materials represent transformative technology for next-generation RF electronics, delivering sub-1 dB noise figure with efficient multi-milliwatt consumption and multi-gigahertz bandwidth, establishing foundations for power-efficient, high-sensitivity wireless systems spanning IoT to millimeter-wave applications.

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Advanced Nanosheet Transistor for Next-Generation High-Speed Low Noise Amplifiers

  • 章节

  • 发表日期：

    2026年

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  • Spandana Saggurthi,
  • Sk. Hasane Ahammad

摘要

Semiconductor scaling faces fundamental limits with conventional architectures, driving the development of gate-all-around (GAA) nanosheet transistors for sub-3 nm nodes. These devices offer superior electrostatic control through vertically stacked channels, enhanced transconductance efficiency with \(g_m/g_{ds}\) ratios exceeding \(100\, \mathrm {V^{-1}}\) , and improved short-channel suppression with DIBL below \(20\, \mathrm {mV/V}\) , making them optimal for RF applications requiring low noise, high gain, and power efficiency in 5G/6G and IoT systems. This work presents a source-degenerated low noise amplifier (LNA) utilizing nanosheet technology, incorporating physics-based modeling with quantum confinement effects, nanosheet-specific noise parameters with reduced channel noise factor ( \(\gamma = 0.45\) versus 0.67 conventional), rigorous small-signal analysis, multi-objective optimization, and Monte Carlo statistical analysis across process variations including threshold voltage ( \(\pm 15\, \textrm{mV}\) ) and mobility ( \(\pm 8\%\) ) fluctuations. Results demonstrate significant achievements with the optimized nanosheet LNA achieving \(0.9\, \textrm{dB}\) minimum noise figure at \(2.4\, \textrm{GHz}\) , \(22\, \textrm{dB}\) voltage gain through enhanced transconductance, \(1.5\, \textrm{mW}\) power consumption enabling 35–45% reduction versus conventional designs, and optimized input matching with \(S_{11} < -15\, \textrm{dB}\) across 1– \(6\, \textrm{GHz}\) bandwidth through precise source degeneration design, with robust yield exceeding 95% across process variations. These improvements enable substantial RF circuit enhancements, particularly benefiting power-efficient applications including extended operational lifetime in wireless sensors, improved energy efficiency in 5G/6G base stations, enhanced energy-harvesting IoT devices, and reduced consumption in medical communication systems, while the systematic methodology provides an accessible framework for academic and industrial implementation. Advanced nanosheet materials represent transformative technology for next-generation RF electronics, delivering sub-1 dB noise figure with efficient multi-milliwatt consumption and multi-gigahertz bandwidth, establishing foundations for power-efficient, high-sensitivity wireless systems spanning IoT to millimeter-wave applications.