Introduction to Next-Generation High-Speed Electronics and Optoelectronics (Vol. 2)
摘要
This volume charts a deliberate path from foundational materials and nanoscale physics to deployable high-speed systems. It opens with technology-scouting across beyond-silicon platforms—TMDs, graphene, perovskites, topological and other quantum materials—then builds the device and fabrication toolkit needed for modern integration (quantum confinement, ballistic transport, plasmonics, ALD/CVD, and advanced lithography). The middle chapters develop quantum-photonics concepts for robust entanglement and communication, and introduce transistor/circuit advances ranging from SiC triple-metal GAA MOSFETs and high-linearity GaN HEMTs to reliability coding for dense memories and channel models for challenging media such as turbid underwater optics. Precision analog blocks are treated as first-class citizens through a cryogenically robust bandgap reference and an LNA based on nanosheet transistors. System-facing contributions span high-speed networks, machine-learned photonic gas sensing, a hardware-efficient NLP Transformer, smart nanomaterials, Industry-4.0 monitoring, MEMS–CMOS co-design (including Bio-MEMS integration), and THz imaging. The closing discussion organizes 6G key performance indicators and enabling levers—THz spectrum, massive MIMO, RIS, edge/LEO, slicing—grounding the volume’s cross-layer message: co-optimize materials, devices, circuits, channels, and algorithms with manufacturability and sustainability in view.