The SiC MOSFET power electronic devices have been widely applied in high-performance power conversion systems due to their high switching frequency and fast switching speed. However, they also cause serious electromagnetic interference (EMI) problems, especially in the high-frequency radiation frequency band ranging from 30 MHz to 300 MHz [1]. The traditional EMI analysis models mainly focus on the conductive frequency band below 30 MHz and cannot accurately assess the influence of SiC MOSFET’s high-frequency radiation noise. Therefore, this paper proposes an improved electromagnetic interference analysis model for SiC MOSFET. By carefully considering its junction capacitance, on-resistance, and nonlinear characteristics of channel current, the influence of nonlinear parameters on high-frequency radiation noise was evaluated [2]. The simulation results show that the proposed model has more accurate spectral prediction in the high-frequency band and the accuracy of the model was verified through dynamic and static simulations.