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The Integrated Gate-Commutated Thyristor (IGCT) is a novel semiconductor device. While its application in Modular Multilevel Converter-Based High Voltage Direct Current (MMC-HVDC) valves has addressed critical technical challenges such as device selection, its electromagnetic interference (EMI) impact on power grids remains unclear. This paper investigates the conducted EMI characteristics of IGCTs in MMC-HVDC transmission systems. The structure and switching waveform features of IGCTs are introduced, and an equivalent circuit model of the submodule for MMC-HVDC converter valves is established, followed by broadband modeling and computational analysis. Simulation tests are conducted to compare the EMI characteristics of IGCT-based converter valves with those of IGBT-based counterparts. The results indicate that, under identical switching frequencies, the conducted EMI levels of IGCT-based converter valves are comparable to those of IGBT-based converter valves.

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Research on Conducted Electromagnetic Interference Characteristics of IGCT-Based Modular Multilevel Converters

  • 会议论文

  • 发表日期：

    2026年

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  • Xuetao Liu,
  • Yajun Lu,
  • Yifeng Ye,
  • Qiang Fan,
  • Zhixiang Liu,
  • Yu Zhang,
  • Hong Shen,
  • Lei Qi

摘要

The Integrated Gate-Commutated Thyristor (IGCT) is a novel semiconductor device. While its application in Modular Multilevel Converter-Based High Voltage Direct Current (MMC-HVDC) valves has addressed critical technical challenges such as device selection, its electromagnetic interference (EMI) impact on power grids remains unclear. This paper investigates the conducted EMI characteristics of IGCTs in MMC-HVDC transmission systems. The structure and switching waveform features of IGCTs are introduced, and an equivalent circuit model of the submodule for MMC-HVDC converter valves is established, followed by broadband modeling and computational analysis. Simulation tests are conducted to compare the EMI characteristics of IGCT-based converter valves with those of IGBT-based counterparts. The results indicate that, under identical switching frequencies, the conducted EMI levels of IGCT-based converter valves are comparable to those of IGBT-based converter valves.