Inductive energy storage pulsed power supplies use high energy density inductors as energy storage elements, which have higher energy storage density than capacitive energy storage and better operational stability than inertial energy storage.and has great potential in the field of new concept weapons such as electromagnetic railgun.Among various types of inductive pulsed power supplies, the XRAM-type pulsed power supply has become an important solution for power supply ractical deployment due to its low voltage stress on main switches and exceptional scalability.This study investigates the operational characteristics of semiconductor devices in four-stage XRAM-type pulsed power supplies, with specific focus on addressing voltage-related challenges during switching turn-off transients.Through circuit theory analysis and simulation, we conducted a detailed examination of semiconductor device behavior during switching turn-off transients.A dedicated four-stage XRAM-type pulsed power supply test platform was established to characterize reverse voltage stress on semiconductor switches and investigate dynamic interactions among thyristors.It was demonstrated that incorporating snubber circuits and implementing topology modifications can significantly reduce reverse voltage stress across switching devices.In conclusion, the methodology presented in this study significantly enhances the operational reliability of semiconductor devices in four-stage XRAM-type pulsed power supplies. This advancement establishes a viable technical pathway for stable high-power operation, thereby accelerating deployment in emerging applications such as new-concept weapon systems.