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With increasing demand for high-efficiency and compact power management systems in electric and hybrid vehicles (EHVs), the need for innovative semiconductor devices has become paramount. This study investigates the performance of a raised-source-drain double-gate junctionless field-effect transistor (RSD-DG JLFET) through detailed 2D device simulations. The proposed structure shows better performance against conventional PMOSFET and JLFET designs, focusing on parameters such as subthreshold swing, threshold voltage, and on/off current ratio. In addition to static and dynamic performance, the thermal and switching characteristics of different body materials, including switching delay and transition speed, are evaluated to assess the device’s effectiveness in high-frequency switching of EV power converters. Simulation results show that RSD-DG JLFET delivers superior electrical and switching performance, thereby reducing power loss during transitions and enabling faster and reliable operation. These features make it a potential high-performance alternative in next-generation electric vehicle applications.

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A Performance Study of Raised-Source-Drain Double-Gate JLFET for Electric Vehicles

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  • 发表日期：

    2026年

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  • Rikhit Swargiary,
  • Kaushik Chandra Deva Sarma

摘要

With increasing demand for high-efficiency and compact power management systems in electric and hybrid vehicles (EHVs), the need for innovative semiconductor devices has become paramount. This study investigates the performance of a raised-source-drain double-gate junctionless field-effect transistor (RSD-DG JLFET) through detailed 2D device simulations. The proposed structure shows better performance against conventional PMOSFET and JLFET designs, focusing on parameters such as subthreshold swing, threshold voltage, and on/off current ratio. In addition to static and dynamic performance, the thermal and switching characteristics of different body materials, including switching delay and transition speed, are evaluated to assess the device’s effectiveness in high-frequency switching of EV power converters. Simulation results show that RSD-DG JLFET delivers superior electrical and switching performance, thereby reducing power loss during transitions and enabling faster and reliable operation. These features make it a potential high-performance alternative in next-generation electric vehicle applications.