Ferroelectric-aided tunnel FETs use polarization of the ferroelectric layer integrated into the gate stack of the TFET to regulate channel conductivity. The purpose of this chapter is to examine the effects of ferroelectric material regarding the performance of a tunnel field-effect transistor for low-power high-end applications in modern Internet of Thing sectors. To accomplish this purpose, a newly modified device with double-gate engineering, called the heterojunction source-pocket ferroelectric-aided tunnel FET, is constructed and evaluated. The Silvaco Atlas TCAD device simulator examines the impact of ferroelectric layer thicknesses on device performance characteristics using a model based on Miller et al.’s ferroelectric TFET device physics. Polarization features discovered for ferroelectric silicon-doped hafnium oxide (Si:HfO2) have been incorporated into this model. This is because the remanent polarization in this material increases dramatically as its thickness decreases. The criterion was established to avoid the ferroelectric hysteresis effect. The device performance is assessed using direct current (DC), alternating current (AC), and the most important linearity assessments, both with and without the ferroelectric layer. A ferroelectric layer is used to take advantage of gate voltage amplification produced by the effect of ferroelectric negative capacitance, which can enhance the electric field at the source–channel interface. This chapter explores the decrease in power supply caused by internal voltage amplification of the ferroelectric-enabled TFETs. This reduction in power supply results in a drop in threshold voltage, and it is feasible to attain a significantly decreased subthreshold swing (SS) while still providing a sufficiently strong drive current at a very low operating voltage.