The continuous demands for electronic miniaturization require innovative materials that can overcome the physical and performance limitations of the conventional silicon technology. This chapter first discusses advanced nanomaterials—such as 2D materials (graphene, transition-metal dichalcogenides), 1D nanostructures (carbon nanotubes, nanowires), and novel emerging categories (e.g., MXenes, Perovskite materials)—and their potential applications to overcome the limits of electrical and electronics miniaturization. We further review the synthesis and fabrication processes that allow seamless integration of these nanomaterials within current Complementary Metal Oxide Semiconductor (CMOS) processes, with an emphasis on enhancements in electrical conductance, thermal management, and mechanical flexibility. Integration options with current CMOS technologies are reviewed and the related technological challenges and routes to resolve them are drawn. In addition, a wide range of applications like high-performance transistors and interconnects as well as nano sensors from Internet of Things (IoT), memory devices, wearable and flexible electronics, and quantum devices have also demonstrated the disruptive potential of these materials. Issues and considerations such as materials integration, reliability, and scalability are discussed, and prospects are given. The chapter aims to highlight that nanomaterials are a key to the next generation of miniaturized electronics that will continue to the development of Moore’s law and the creation of beyond-silicon technologies.