Bulk III-nitride semiconductor materials, such as InN, GaN, AlN and their alloys, have proved to be ideal materials for photoelectric devices, power electronic devices, surface acoustic wave devices, and many other related technologies because of their tunable direct band gaps, high breakdown voltage, and polarization characteristics. Compared with the bulk structure, the 2D group-III nitride semiconductor material has a thin atomic structure and a high activity surface. The combination of these two advantages can make the material exhibit more excellent and interesting properties (Zhou et al. in Mater Today Nano 8, 2019 [1]; Wang et al. in J Mater Chem C 9:17201–17232, 2021 [2]). Therefore, it is of great significance to study 2D III-nitride materials, which are critical to the developments of flexible electronic and photoelectric devices, single-photon emission devices, spin-based devices, and many other similar advanced technological components.