Quasi van der Waals Epitaxy Nitride Device for Heat Dissipation
摘要
The rapid increase in power density of electronic devices has made efficient heat dissipation be a key issue in the development of information, communication, and energy storage technologies (Kang et al. in Nat Electron 4:416–423, 2021 [1]; Schubert et al. in Rep Prog Phys 69:3069–3099, 2006 [2]). The development of next-generation integrated circuits, 3D integration, and ultra-fast high-power density communication devices has made the thermal management extremely demanding, and efficient heat dissipation has become an important research content for the performance and reliability of modern electronic, optoelectronic, and photonic devices and systems. The expanded application of nitride high-power devices also faces similar problems, mainly manifested in optoelectronic and microelectronic device applications such as LEDs and HEMTs. For example, as the power of LEDs continues to increase, the thermal problems they face are becoming more and more serious. How to solve the heat generation limitation on the device applications has become a hot research topic in the international academic and industrial circles.