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In recent years, III-group nitride semiconductors have attracted much attention due to their excellent physical properties and wide range of applications in solid-state lighting, flat panel displays, and solar and power electronics. As direct bandgap semiconductors, III-group nitrides offer wide bandgaps ranging from 0.64 eV for InN and 3.4 eV for GaN to 6.2 eV for AlN, spanning the entire UV and visible wavelength bands, as well as the near-infrared range.

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Flexibility of Quasi van der Waals Epitaxial Nitrides

  • 章节

  • 发表日期：

    2025年

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  • Tongbo Wei,
  • Zhiqiang Liu,
  • Jinmin Li

摘要

In recent years, III-group nitride semiconductors have attracted much attention due to their excellent physical properties and wide range of applications in solid-state lighting, flat panel displays, and solar and power electronics. As direct bandgap semiconductors, III-group nitrides offer wide bandgaps ranging from 0.64 eV for InN and 3.4 eV for GaN to 6.2 eV for AlN, spanning the entire UV and visible wavelength bands, as well as the near-infrared range.