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Low nucleation density makes the direct growth of thin-film compound semiconductors on 2D substrates difficult to achieve. The previous section has introduced the interface structure and theory of qvdWE growth on 2D materials. For the III-V compound and graphene system, the ratio of the adsorption energy of the compound on the graphene surface to the aggregation energy of the bulk material (i.e., the energy released when atoms combine into bulk material) should be considered. The larger this ratio, the easier it is for this III-V compound to adsorb and nucleate on graphene. It also exhibits a 2D planar growth mode, that is, it is easier to obtain a smooth, flat film of this material through qvdWE growth. In addition, the migration barrier of atoms on the graphene surface should also be considered.

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Nitride Quasi van der Waals Epitaxy Bonding and Nucleation on 2D Materials

  • 章节

  • 发表日期：

    2025年

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  • Tongbo Wei,
  • Zhiqiang Liu,
  • Jinmin Li

摘要

Low nucleation density makes the direct growth of thin-film compound semiconductors on 2D substrates difficult to achieve. The previous section has introduced the interface structure and theory of qvdWE growth on 2D materials. For the III-V compound and graphene system, the ratio of the adsorption energy of the compound on the graphene surface to the aggregation energy of the bulk material (i.e., the energy released when atoms combine into bulk material) should be considered. The larger this ratio, the easier it is for this III-V compound to adsorb and nucleate on graphene. It also exhibits a 2D planar growth mode, that is, it is easier to obtain a smooth, flat film of this material through qvdWE growth. In addition, the migration barrier of atoms on the graphene surface should also be considered.