Deep Ultraviolet (DUV) lithography remains a key enabler in semiconductor manufacturing, especially as the industry pushes toward sub-10 nm features. The miniaturization of devices demands optimized resist materials capable of achieving high sensitivity, low line edge roughness (LER), and uniform critical dimensions (CD) under stringent process conditions. This paper investigates the optimization of resist performance in DUV lithography through novel resist formulations and process adjustments. Focusing on polymer structure modifications and additive selection, the study evaluates their effects on sensitivity and resolution, balancing the trade-offs essential for sub-10 nm fabrication. Experimental results demonstrate that specific additives significantly reduce LER while maintaining high-resolution capabilities, an improvement critical for modern, high-density integrated circuits. A systematic analysis highlights the optimal balance achieved between sensitivity and CD uniformity, offering insights into the design of resist materials that meet the advanced requirements of DUV lithography. This research establishes a pathway for enhancing DUV lithography’s role in next-generation device fabrication, potentially extending its relevance alongside extreme ultraviolet (EUV) lithography.