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Perovskite materials have gained significant importance in designing optoelectronic devices owing to their excellent light harvesting properties, efficient carrier transport, tunable bandgap, and facile processability. The present work reports thin film-based photodetector fabricated by using Silicon (Si) and Silicon Nanowire (Si NW) heterojunction with halide perovskite CH3NH3PbBr3 (MAPbBr3). Perovskite thin films were deposited by a one-step coating method. The I–V curves of both Si/MAPbBr3/Ag and SiNW/MAPbBr3/Ag photodetectors exhibited a strong dependence on light intensity. The time domain response of the photodetectors showed a fast-photoswitching response with rise and fall times in the range of 0.5 s for Si/MAPbBr3/Ag and 0.3 s for SiNW/MAPbBr3/Ag. The optimized heterojunction of Si/Perovskite thin film exhibited spectral responsivity (SR) of 64.5 mA/W, whereas that of Si NW/Perovskite thin film exhibited spectral responsivity (SR) of 51.2 mA/W under white light illumination. The present study provides an in-depth analysis of the differences between Si/Perovskite and Si NW/Perovskite heterojunctions. Si/Perovskite junction can be further optimized for stable current–voltage characteristics. Further, Si NW/Perovskite junction can be studied for better photocurrent and spectral responsivity results.

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Silicon Nanowire/Perovskite Heterojunction-Based Photodetector

  • 会议论文

  • 发表日期：

    2026年

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  • Aleena Kulsum Abbasi,
  • Rinki Aggarwal,
  • Sucheta Sengupta,
  • Rakhi Grover

摘要

Perovskite materials have gained significant importance in designing optoelectronic devices owing to their excellent light harvesting properties, efficient carrier transport, tunable bandgap, and facile processability. The present work reports thin film-based photodetector fabricated by using Silicon (Si) and Silicon Nanowire (Si NW) heterojunction with halide perovskite CH3NH3PbBr3 (MAPbBr3). Perovskite thin films were deposited by a one-step coating method. The I–V curves of both Si/MAPbBr3/Ag and SiNW/MAPbBr3/Ag photodetectors exhibited a strong dependence on light intensity. The time domain response of the photodetectors showed a fast-photoswitching response with rise and fall times in the range of 0.5 s for Si/MAPbBr3/Ag and 0.3 s for SiNW/MAPbBr3/Ag. The optimized heterojunction of Si/Perovskite thin film exhibited spectral responsivity (SR) of 64.5 mA/W, whereas that of Si NW/Perovskite thin film exhibited spectral responsivity (SR) of 51.2 mA/W under white light illumination. The present study provides an in-depth analysis of the differences between Si/Perovskite and Si NW/Perovskite heterojunctions. Si/Perovskite junction can be further optimized for stable current–voltage characteristics. Further, Si NW/Perovskite junction can be studied for better photocurrent and spectral responsivity results.