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In this study, Ti3C2Tx MXene was synthesized from Ti3AlC2 MAX phase using three distinct etching strategies: direct hydrofluoric acid (HF) etching, a milder Lithium Fluoride (LiF) – Hydrochloric Acid (HCl) route, and a modified LiF–HCl route incorporating Ferric Chloride (FeCl3). X-ray diffraction (XRD) analysis revealed that the modified etching route led to the complete removal of the Al layer, evidenced by the complete disappearance of the (104) peak corresponding to the Ti–Al bond. Moreover, the modified etching method resulted in an increased interlayer spacing of 1.40 nm compared to the LiF–HCl-etched sample, indicating enhanced delamination capability and better ion intercalation. It exhibited a specific gravimetric capacitance of 31.46 F/g demonstrating that FeCl3-assisted in-situ modification of the LiF–HCl etching method offers an effective and safer alternative to conventional HF etching for producing high-quality Ti3C2Tx MXene suitable for energy storage applications such as supercapacitors.

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In-Situ FeCl3 Addition Strategy to Improve the Efficiency of LiF-HCl Assisted Etching for the Synthesis of Ti3C2Tx MXene

  • 会议论文

  • 发表日期：

    2025年

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  • Varsha Vijayan,
  • Asha Arackal Sukumaran

摘要

In this study, Ti3C2Tx MXene was synthesized from Ti3AlC2 MAX phase using three distinct etching strategies: direct hydrofluoric acid (HF) etching, a milder Lithium Fluoride (LiF) – Hydrochloric Acid (HCl) route, and a modified LiF–HCl route incorporating Ferric Chloride (FeCl3). X-ray diffraction (XRD) analysis revealed that the modified etching route led to the complete removal of the Al layer, evidenced by the complete disappearance of the (104) peak corresponding to the Ti–Al bond. Moreover, the modified etching method resulted in an increased interlayer spacing of 1.40 nm compared to the LiF–HCl-etched sample, indicating enhanced delamination capability and better ion intercalation. It exhibited a specific gravimetric capacitance of 31.46 F/g demonstrating that FeCl3-assisted in-situ modification of the LiF–HCl etching method offers an effective and safer alternative to conventional HF etching for producing high-quality Ti3C2Tx MXene suitable for energy storage applications such as supercapacitors.