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The influence of ZnO nanostructured morphology, combined with the active layer of P3HT, was analyzed to assess its impact on the enhanced photo response of the ZnO/Poly(3-hexylthiophene-2,5-diyl) (P3HT) hybrid. The unique properties of this hybrid material stem from the synergy between the organic semiconductor P3HT, known for its excellent hole transport and light absorption, and ZnO nanorods, recognized for their high electron mobility and large surface area. This study examines the synthesis, structural characterization, and electrical and optoelectronic properties of P3HT/ZnO nanorod composites. The I-V characteristics demonstrated a significant improvement in current under light illumination. The external quantum efficiency (EQE) of the P3HT/ZnO nanorod was measured as 21% at 375 nm, while its photoresponsivity was recorded as 65 mA/W, showing a gradual decline over time. Additionally, thermal stability tests conducted at 30 °C, 50 °C, and 70 °C indicated consistent photoresponsivity, highlighting the material’s stability under varying temperatures.

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Fabrication of Self-Biased Thermally Stable, ZnO/P3HT-Based Hybrid Photodetector

  • 会议论文

  • 发表日期：

    2025年

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  • Akash Chaurasiya,
  • Jogendra Singh Rana,
  • Abhishek Kumar Singh

摘要

The influence of ZnO nanostructured morphology, combined with the active layer of P3HT, was analyzed to assess its impact on the enhanced photo response of the ZnO/Poly(3-hexylthiophene-2,5-diyl) (P3HT) hybrid. The unique properties of this hybrid material stem from the synergy between the organic semiconductor P3HT, known for its excellent hole transport and light absorption, and ZnO nanorods, recognized for their high electron mobility and large surface area. This study examines the synthesis, structural characterization, and electrical and optoelectronic properties of P3HT/ZnO nanorod composites. The I-V characteristics demonstrated a significant improvement in current under light illumination. The external quantum efficiency (EQE) of the P3HT/ZnO nanorod was measured as 21% at 375 nm, while its photoresponsivity was recorded as 65 mA/W, showing a gradual decline over time. Additionally, thermal stability tests conducted at 30 °C, 50 °C, and 70 °C indicated consistent photoresponsivity, highlighting the material’s stability under varying temperatures.