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In this work, an easy and cost-effective deposition technique of successive ionic layer adsorption and reaction (SILAR) is used for in-situ sensitization of bismuth sulphide (Bi2S3). The Bi2S3 sensitized solar cells are grown on anatase phase titanium dioxide (TiO2). The number of SILAR cycles is varied from 5 to 25 with an interval of 5. The SILAR grown Bi2S3 are characterized using XRD, Raman spectroscopy, SEM, UV-Vis absorption spectroscopy and cyclic voltammetry. The band gap of the sample decreased from 1.8 to 1.44 eV with increase in the deposition cycle indicating an increase in the particle size. The HOMO-LUMO levels estimated through cyclic voltammetry predicts the likelihood of carrier transfer from Bi₂S₃ to TiO₂ photoanode layer. Out of all the devices fabricated using various SILAR cycles, the best results are obtained for the film employing five SILAR cycles. By incorporating an additional TiO₂ buffer layer, which serves to mitigate electron leakage, further improvement in the solar cell parameters is achieved. The device demonstrated an open circuit voltage of 400 mV, a short circuit current of 0.28 mA/cm2, and a power conversion efficiency of 0.045%.

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In-situ Assembly of Bi₂S₃ on TiO₂ as Photoanode in Sensitized Solar Cells

  • 会议论文

  • 发表日期：

    2025年

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  • Arya Mohan,
  • Arya Krishna,
  • K. G. Deepa

摘要

In this work, an easy and cost-effective deposition technique of successive ionic layer adsorption and reaction (SILAR) is used for in-situ sensitization of bismuth sulphide (Bi2S3). The Bi2S3 sensitized solar cells are grown on anatase phase titanium dioxide (TiO2). The number of SILAR cycles is varied from 5 to 25 with an interval of 5. The SILAR grown Bi2S3 are characterized using XRD, Raman spectroscopy, SEM, UV-Vis absorption spectroscopy and cyclic voltammetry. The band gap of the sample decreased from 1.8 to 1.44 eV with increase in the deposition cycle indicating an increase in the particle size. The HOMO-LUMO levels estimated through cyclic voltammetry predicts the likelihood of carrier transfer from Bi₂S₃ to TiO₂ photoanode layer. Out of all the devices fabricated using various SILAR cycles, the best results are obtained for the film employing five SILAR cycles. By incorporating an additional TiO₂ buffer layer, which serves to mitigate electron leakage, further improvement in the solar cell parameters is achieved. The device demonstrated an open circuit voltage of 400 mV, a short circuit current of 0.28 mA/cm2, and a power conversion efficiency of 0.045%.