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To minimize fossil fuel consumption, production of hydrogen energy is crucial. Therefore, designing an electrocatalyst that is highly electrochemical active and cost-effective is the most important need. Herein, tungsten disulfide quantum dots (WS2-QDs) are synthesized by a facile one-step hydrothermal method, which is further modified by the Pd nanoparticles. Pd nanoparticle-decorated WS2-QDs (denoted as Pd@WS2-QDs) show higher HER activity than alone WS2-QDs. To enhance the HER performance further, a nanocomposite of Pd@WS2-QDs with reduced graphene oxide (rGO) is synthesized by physical mixing and characterized by various characterization tools. The as-synthesized nanocomposite (Pd@WS2-QDs/rGO) excels in HER performance with respect to WS2-QDs, Pd@WS2-QDs and rGO having overpotential of −184 mV at 10 mAcm−2, the Tafel slope value of 128.1 mVdec−1, resistance to charge transfer (Rct) 11.88 Ω cm2, and double layer capacitance (Cdl) value of 3.69 mF cm−2.

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A Nanocomposite of Pd Nanoparticle-Decorated Tungsten Disulfide Quantum Dots (WS2-QDs) and Reduced Graphene Oxide (rGO) for Enhanced HER Performance

  • 会议论文

  • 发表日期：

    2026年

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  • Shweta Pal,
  • Nikhil,
  • S. K. Srivastava,
  • Gopal Ji,
  • Rajiv Prakash,
  • Monika Srivastava

摘要

To minimize fossil fuel consumption, production of hydrogen energy is crucial. Therefore, designing an electrocatalyst that is highly electrochemical active and cost-effective is the most important need. Herein, tungsten disulfide quantum dots (WS2-QDs) are synthesized by a facile one-step hydrothermal method, which is further modified by the Pd nanoparticles. Pd nanoparticle-decorated WS2-QDs (denoted as Pd@WS2-QDs) show higher HER activity than alone WS2-QDs. To enhance the HER performance further, a nanocomposite of Pd@WS2-QDs with reduced graphene oxide (rGO) is synthesized by physical mixing and characterized by various characterization tools. The as-synthesized nanocomposite (Pd@WS2-QDs/rGO) excels in HER performance with respect to WS2-QDs, Pd@WS2-QDs and rGO having overpotential of −184 mV at 10 mAcm−2, the Tafel slope value of 128.1 mVdec−1, resistance to charge transfer (Rct) 11.88 Ω cm2, and double layer capacitance (Cdl) value of 3.69 mF cm−2.