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Gallium nitride (GaN)-based micro light-emitting diodes (μLEDs) have become a promising light source, with broad application prospects in next-generation display technologies and visible light communication. When used in the display field, two key technical bottlenecks need solving: full-color solutions and mass transfer technology. At the same time, the external quantum efficiency (EQE) of GaN-based μLED devices is generally low, which is another challenge for μLED displays. In this chapter, we briefly review the current development status of GaN-based μLEDs and focus on the underly mechanism for the low EQE of GaN-based μLEDs. Secondly, by starting from the physical mechanism of the device itself, we analyze a series of measures to improve the EQE of μLED devices, aiming to provide guidance for further developing high-performance GaN-based μLEDs.

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Key Factors Limiting the External Quantum Efficiency of GaN-Based Micro-LEDs and Remedies

  • 章节

  • 发表日期：

    2025年

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  • Hang Sheng,
  • Chunshuang Chu,
  • Kangkai Tian,
  • Yonghui Zhang,
  • Zihui Zhang

摘要

Gallium nitride (GaN)-based micro light-emitting diodes (μLEDs) have become a promising light source, with broad application prospects in next-generation display technologies and visible light communication. When used in the display field, two key technical bottlenecks need solving: full-color solutions and mass transfer technology. At the same time, the external quantum efficiency (EQE) of GaN-based μLED devices is generally low, which is another challenge for μLED displays. In this chapter, we briefly review the current development status of GaN-based μLEDs and focus on the underly mechanism for the low EQE of GaN-based μLEDs. Secondly, by starting from the physical mechanism of the device itself, we analyze a series of measures to improve the EQE of μLED devices, aiming to provide guidance for further developing high-performance GaN-based μLEDs.