Fabrication and Optoelectronic Properties of GaN-Based Micro-LEDs
摘要
In recent years, micro-light-emitting diodes (LEDs) have undergone rapid development in research and application due to their excellent optoelectronic properties. This chapter compares the display characteristics of micro-LEDs with LCDs and OLEDs, and introduces the applications of micro-LEDs in display and communication. Subsequently, the fabrication processes of micro-LED devices are introduced, including substrate stripping, quantum dot integration with micro-LEDs, and other key technologies for preparing full-color micro-LED displays. Finally, the size effect, temperature effect, aging, and modulation bandwidth characteristics of micro-LEDs are analyzed.