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In present work we studies 3 at.% Cu doped TiO2 nanostructure thin films at temperature annealing ranging between 400 and 700 ℃ were synthesized by sol-gel process. XRD, SEM and Photoluminescence Spectroscopy characterized the doped nanostructure thin films. Analysis of X-ray diffraction patterns shows anatase structure at low annealing tempera ture 400 ℃, by increasing temperature up 700 ℃ the anatase phase still coexistance with rutile phase. The SEM images shows spherical.shape at low temperature and with increase of anneal ing temperature, the nanostructure take shape of nanorods. The PL spectra reveal the increase of intensity and red shift in the doped samples with increasing of temperature, the band gap is de creased. The best optical properties are obtained with high annealing temperature (700 ℃). This enhancement is attributed to the Cu impurity levels introduced in band-gap and the high absorb ance in UV region. 3. at. % Cu doped TiO2 thin films provides a highest photoactivity application.

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Effect of Cu Doping on TiO2 Nanosrtucture Thin Films Synthesis by Sol-Gel Method

  • 会议论文

  • 发表日期：

    2026年

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  • Abbas Fouzia,
  • Zaibet Asma,
  • Attaf Sonia

摘要

In present work we studies 3 at.% Cu doped TiO2 nanostructure thin films at temperature annealing ranging between 400 and 700 ℃ were synthesized by sol-gel process. XRD, SEM and Photoluminescence Spectroscopy characterized the doped nanostructure thin films. Analysis of X-ray diffraction patterns shows anatase structure at low annealing tempera ture 400 ℃, by increasing temperature up 700 ℃ the anatase phase still coexistance with rutile phase. The SEM images shows spherical.shape at low temperature and with increase of anneal ing temperature, the nanostructure take shape of nanorods. The PL spectra reveal the increase of intensity and red shift in the doped samples with increasing of temperature, the band gap is de creased. The best optical properties are obtained with high annealing temperature (700 ℃). This enhancement is attributed to the Cu impurity levels introduced in band-gap and the high absorb ance in UV region. 3. at. % Cu doped TiO2 thin films provides a highest photoactivity application.