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This work reports a simulation study of Horizontal Oxide Double Gate Tunnel Field Effect Transistor (HODGTFET) over Vertical Oxide Double Gate Tunnel Field Effect Transistor (VODGTFET) and Double Gate Tunnel Field Effect Transistor (DGTFET) by applying device engineering. Performance is analyzed on the basic of gate capacitance (Cg), subthreshold slope (SS), cutoff frequency (Ft), transconductance (gm), threshold voltage (Vth), Gain Bandwidth Product (GBP), and ION/IOFF ratio. A comprehensive and calibrated TCAD study is conducted to investigate the device physics of the proposed structure. The value of ION/IOFF ratio, subthreshold slope, and threshold voltage were found to be ~ 1013, 28.5 mV/dec and 0.5 V. The proposed TFET structure's decreased average subthreshold swing, lower OFF current (IOFF), and minimized ambipolar behavior make it ideal for high-performance, ultra-low-power applications, and bio-integrable circuits.

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Analog Performance Evaluation of a Gate Stack Engineered Double Oxide Tunnel Field Effect Transistor

  • 会议论文

  • 发表日期：

    2026年

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  • Sudha Subhalaxmi Muduli,
  • Ananya Dastidar,
  • Sukanta Kumar Swain,
  • Aruna Tripathy

摘要

This work reports a simulation study of Horizontal Oxide Double Gate Tunnel Field Effect Transistor (HODGTFET) over Vertical Oxide Double Gate Tunnel Field Effect Transistor (VODGTFET) and Double Gate Tunnel Field Effect Transistor (DGTFET) by applying device engineering. Performance is analyzed on the basic of gate capacitance (Cg), subthreshold slope (SS), cutoff frequency (Ft), transconductance (gm), threshold voltage (Vth), Gain Bandwidth Product (GBP), and ION/IOFF ratio. A comprehensive and calibrated TCAD study is conducted to investigate the device physics of the proposed structure. The value of ION/IOFF ratio, subthreshold slope, and threshold voltage were found to be ~ 1013, 28.5 mV/dec and 0.5 V. The proposed TFET structure's decreased average subthreshold swing, lower OFF current (IOFF), and minimized ambipolar behavior make it ideal for high-performance, ultra-low-power applications, and bio-integrable circuits.