TSV (silicon through-hole) is a cutting-edge interconnect technology for three-dimensional (3D) integration in microelectronics. It employs additives comprising three components to enable seamless TSV filling. A series of experiments was performed to optimize the concentration ratio of these additives. To reduce R&D costs, efforts have shifted toward developing more economical solutions, including two-component additives. This study examines the effects of current density and additive concentration on TSV filling using sodium dimethylformamide propane sulfonate (TPS). The find–ings reveal that TPS facilitates void-free TSVs under conditions of 0.1 g/L TPS and 1 g/L AESS with a plating current of 2 mA/cm2. A distinct “V”-shaped growth pattern was observed. The combined use of TPS with inhibitors PEG and AESS demonstrated significant leveling and refining effects on copper grains.