The further extension of residual microcracks in monocrystal silicon under mechanical or thermal stresses is one of the main reasons for failure of integrated circuit chips. Therefore, it is crucial to investigate the fracture and fatigue behavior of monocrystal silicon. This paper investigates the relationship between fracture strength and damage depth in single crystal silicon by pre-inducing damage through indentation tests. The relation is that with the increase of prefabricated damage load, the depth of monocrystal silicon sub-surface cracks increases and the fracture strength decreases. Concurrently, fatigue and strength tests were conducted on monocrystal silicon wafers with prefabricated damage to determine the fracture strength under cyclic loading. It was demonstrated that 1,000 cycles of loading and unloading do not affect the fracture strength of monocrystal silicon. Observations of the subsurface fracture morphology revealed that, after the fatigue experiments, surface cracks in monocrystal silicon extended along the diagonal direction of the indentation, with no extension in the depth direction. This paper provides a valuable reference for understanding the fatigue failure mechanisms of monocrystal silicon.