In this work, the impact of different interface trap charges (ITCs) has investigated for heterogeneous gate dielectric double-gate tunnel field-effect transistor (HGD-DGTFET) by using trap model at the interface of semiconductor/insulator. For this, we have observed the effects of different ITCs on both heterogeneous gate dielectric double-gate tunnel field-effect transistor (HGD-DGTFET) and gate-oxide-stack double-gate TFET (GOS-DGTFET) was studied with respect to DC, analog/RF, and temperature sensitivity. Both the devices with positive (donor) and negative (acceptor) ITCs have been simulated using Silvaco TCAD tool. To understand the impact of different ITCs on the DC and analog/RF performances, the parameters such as ON current, OFF current, subthreshold swing (SS), electric field, transfer characteristics, transconductance, parasitic capacitance, fT, GBP, and TFP for HGD-DGTFET have been analyzed and compared with that of GOS-DGTFET. Further, to analyze the effect of different ITCs on the reliability (temperature aspect), the parameters also get affected and compared with that of the GOS-DGTFET but showing better stability in case of heterogeneous gate dielectric double-gate TFET. Simulation results show that HGD-DGTFET is more compatible for ITCs and temperature variation.