This paper presents a comparative analysis of key performance parameters between dual FinFET and gate-all-around vertically stacked triple nanosheet field effect transistor for 5 nm node by gate length scaling from 14 to 8 nm. As device dimensions shrink beyond the 5 nm node, understanding the performance trade-offs between these advanced architectures is crucial for continued scaling and improved efficiency. The study highlights the superior performance of NSFET across multiple critical metrics. For 12 nm gate length, NSFET exhibits a higher drive current (Ion) of 82.97 µA compared to 64.35 µA for FinFET, alongside a significantly lower off-state current (Ioff) of 4.26 × 10−11 A, resulting in an improved Ion/Ioff ratio of 1.45 × 10⁶ versus 5 × 105 for FinFET. Furthermore, NSFET demonstrates a reduced Subthreshold Slope (SS) of 67.94 mV/dec, indicating sharper switching characteristics, and a lower Drain-Induced Barrier Lowering (DIBL) of 29.69 mV/V, reflecting enhanced control over short-channel effects. These findings suggest that NSFET offers substantial advantages in terms of power efficiency, switching speed, and overall device performance, positioning it as a more promising technology for future high-performance and low-power electronic applications.