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A stress tunable quantum dot (QD) device composed of GaAs/Al0.3Ga0.7As QD nanopillars and a Pb(Mg1/3Nb2/3O3)-PbTiO (PMN-PT) crystal was fabricated. Semiconductor QD nanopillars were fabricated by using electron beam lithography and dry-etching processes, cleaved from the mother substrate, and scattered on the PMN-PT substrate. The scattered QD nanopillars were tightly fixed on PMN-PT by Al2O3 thin films, enabling highly effective transmission of piezoelectric force to the QD nanopillars. Micro-photoluminescence (PL) measurements were performed by applying an electric field of −32 kV/cm to 32 kV/cm to PMN-PT, which induced an in-plane strain of −0.19% to 0.22%. Results showed that the PL energy varied continuously and almost reversibly in response to the electric field applied to PMN-PT. The total energy shift of 23.5 meV and repeatable response to an applied external field implied successful control of the QD PL energy by our piezoelectric device, which will be applicable in fields such as micro-optics and qubit technologies.

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PL Spectral Tuning of Semiconductor QD Nanopillar by Piezoelectric External Force

  • 会议论文

  • 发表日期：

    2026年

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  • Satoru Odashima,
  • Kosei Tabata,
  • Hirotaka Sasakura,
  • Satoru Adachi,
  • Reina Kaji

摘要

A stress tunable quantum dot (QD) device composed of GaAs/Al0.3Ga0.7As QD nanopillars and a Pb(Mg1/3Nb2/3O3)-PbTiO (PMN-PT) crystal was fabricated. Semiconductor QD nanopillars were fabricated by using electron beam lithography and dry-etching processes, cleaved from the mother substrate, and scattered on the PMN-PT substrate. The scattered QD nanopillars were tightly fixed on PMN-PT by Al2O3 thin films, enabling highly effective transmission of piezoelectric force to the QD nanopillars. Micro-photoluminescence (PL) measurements were performed by applying an electric field of −32 kV/cm to 32 kV/cm to PMN-PT, which induced an in-plane strain of −0.19% to 0.22%. Results showed that the PL energy varied continuously and almost reversibly in response to the electric field applied to PMN-PT. The total energy shift of 23.5 meV and repeatable response to an applied external field implied successful control of the QD PL energy by our piezoelectric device, which will be applicable in fields such as micro-optics and qubit technologies.