This chapter is devoted to addressing the issues of ensuring the efficiency of information transmission systems between integrated circuits. Approaches have been proposed to improve the efficiency of information transmission systems between integrated circuits that meet modern requirements and provide the necessary operating conditions by increasing the occupied area and simulation time. A multi-output level shifter (LS) circuit has been developed, in which efficiency is enhanced by increasing the circuit’s functionality and reducing the impact of aging. This has made it possible to decrease the degradation of power consumption and delay from 83% and 60% to 17% and 12%, respectively, with an approximately twofold increase in the physical design area. A bandgap reference (BGR) circuit based on transistors with a thin gate oxide layer has been proposed, in which parametric degradation caused by aging effects is reduced. This ensures that the deviation of the output voltage and reference current remains below 10% over 10 years of operation, with an 11.2% increase in area.

错误:搜索内容不能为空,请输入英文关键词
错误:关键词超出字数限制,请精简
高级检索

Development of Means to Improve the Efficiency of Information Transmission Systems Between Integrated Circuits

  • Vazgen Melikyan,
  • Kang Li

摘要

This chapter is devoted to addressing the issues of ensuring the efficiency of information transmission systems between integrated circuits. Approaches have been proposed to improve the efficiency of information transmission systems between integrated circuits that meet modern requirements and provide the necessary operating conditions by increasing the occupied area and simulation time. A multi-output level shifter (LS) circuit has been developed, in which efficiency is enhanced by increasing the circuit’s functionality and reducing the impact of aging. This has made it possible to decrease the degradation of power consumption and delay from 83% and 60% to 17% and 12%, respectively, with an approximately twofold increase in the physical design area. A bandgap reference (BGR) circuit based on transistors with a thin gate oxide layer has been proposed, in which parametric degradation caused by aging effects is reduced. This ensures that the deviation of the output voltage and reference current remains below 10% over 10 years of operation, with an 11.2% increase in area.