This chapter is devoted to solving current fundamental problems of improving the reliability and performance of power supply and control systems embedded in integrated memory ICs. Four-phase and six-phase clock signal-controlled charge pump circuits consisting only of pMOS transistors have been developed, in which the effect of aging phenomena has been reduced, ensuring <10% output power deviation after 15 years of operation in high temperature conditions at the expense of 10% and 15% area increase respectively. The proposed circuits provide an aging protected charge pump solution that is also more efficient due to a more precise clocking scheme which allows for a better control over the charging and boosting cycles. A method of dynamic current limiting in voltage regulators has been proposed, which reduces the effects accelerating the aging of the output stage pMOS transistor, ensuring <10% output power deviation after 15 years of operation in high-temperature conditions at the expense of a 20% area increase. The proposed system builds upon existing foldback current limiting techniques, adding enhanced protection against hot carrier injection and negative bias temperature instability effects. The operating envelope of the LDO is designed to always avoid the high-stress conditions, thus maintaining its output capabilities for an extended lifetime. A supply voltage detection circuit has been created to control voltage level shifters in control systems embedded in integrated memory devices, which eliminates their unpredictable failure state under low-voltage conditions while occupying only 425 μm2 area. The proposed circuit matches the failure behavior of the level shifters that are used in the control systems to ensure minimal necessary margin loss of the operational voltages.