Multiferroic Thin Films for Device Applications
摘要
Multiferroic materials in having coexistence of more than one ferroic order, like ferroelectricity, ferromagnetism, and ferro-elasticity, has become a lively area of research due to their promise for multifunctional devices. Multiferroic thin films are interesting among them, due to their low dimensionality and interface tunability provide an extraordinary magnetoelectric coupling control. Synergy between magnetic and ferroelectric order in thin films enables for new functionality with voltage-controlled magnetization. Ferroelectric polarization tunable with magnetism and strain-mediated coupling can be directly utilized in future non-volatile memory, spintronics, energy harvesters, and neuromorphic computing devices. This chapter provides a detailed explanation of the underlying mechanisms of multiferroicity, advanced thin film synthesis techniques, and their impact on structural and functional properties. Also, in-depth discussion on device-level integration, the possibilities, and limitations for scaling multiferroic thin films toward industrial use are explored. Furthermore, issue resolving mitigation technique and future research directions, such as the contribution of artificial heterostructures, two-dimensional (2D) multiferroics, and AI-assisted material design, are discussed to set up the roadmap for commercialization of these multifunctional thin film devices.