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The article studies the effect of an electromagnetic field on a CdTe-SiO2 semiconductor element. The quantum modeling of the process using the electron and hole drift-diffusion equation is considered. An empirical approach is taken into account, taking into account the boundary and initial conditions, which can be reduced to the topological construction of a system with an external electrode. To create a complete picture and the corresponding electromagnetic function of the process for the current, a cylindrical coordinate system is used. The result of the study was the electron current function in cadmium telluride doped with silicon dioxide with the participation of an external electrode with alternating voltage and changing position.

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Mathematical Modeling of Determining the Current of a CdTe-SiO2 Semiconductor in an Alternating Electric Field

  • 会议论文

  • 发表日期：

    2026年

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  • Ibratjon Aliyev,
  • Salim Otajonov,
  • Botirov Qodir,
  • Sherzod Abdullaev,
  • Tursun Ahmedov,
  • Sirga Berdibekova

摘要

The article studies the effect of an electromagnetic field on a CdTe-SiO2 semiconductor element. The quantum modeling of the process using the electron and hole drift-diffusion equation is considered. An empirical approach is taken into account, taking into account the boundary and initial conditions, which can be reduced to the topological construction of a system with an external electrode. To create a complete picture and the corresponding electromagnetic function of the process for the current, a cylindrical coordinate system is used. The result of the study was the electron current function in cadmium telluride doped with silicon dioxide with the participation of an external electrode with alternating voltage and changing position.