Lithium-Containing Semiconductors for Neutron Imaging
摘要
In the past decade, much research has explored the neutron-sensing properties and potential applications of lithium-containing semiconductors in neutron imaging. These semiconductors offer the possibility of achieving high spatial and temporal resolution, superior gamma discrimination, and excellent neutron detection efficiency. Such a combination of features is rare in neutron detection systems. In this paper, the promise of lithium-containing semiconductors to significantly advance neutron radiography, tomography, and energy-resolved imaging is demonstrated. The fundamental properties of lithium-containing semiconductors and their basic electronic pulse processing requirements are examined. Ongoing efforts to enhance the performance of ultrahigh-resolution neutron imaging systems, including improvements in imaging speed and the development of detectors with larger active areas for neutron diffraction facilities, are discussed.