Photoacoustic Method for Evaluating Optical Absorption Coefficients in Nanostructured Silicon with Different Morphologies
摘要
This study presents a photoacoustic spectroscopy (PAS) technique for comprehensively characterizing nanostructured porous siliconPorous silicon (PSi), focusing on its thermal transport and optical absorptionOptical absorption coefficients across various morphologies under multi-wavelength laser irradiation. The methodology leverages the photoacoustic effect, where absorbed light energy is converted into heat, generating a detectable acoustic signal. A key advantage of this approach is its unique capability to determine theThermal conductivity thermal conductivityConductivity of nanostructured PSi by utilizing PA measurements under strong surface light absorption conditions. These experimentally derivedThermal conductivity thermal conductivityConductivity values are subsequently integrated into computational models to refine the estimation of the material’s optical properties at different wavelengths. Analyzing the amplitude-frequency characteristics of the photoacoustic response enables precise investigation of light-matter interactions in complex nanostructured systems. Our findings demonstrate the effectiveness of the photoacoustic method as a non-destructive and reliable tool for characterizing optical absorptionOptical absorption behavior in PSi, produced by electrochemical etching and metal-assisted chemical etching. This approach provides crucial insights for optimizing PSi properties across diverse scientific and technological applications, including photonics, sensor development, and energy technologies.