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Warpage in Cu–Cu bonded stacked die structures is governed by the interplay between interfacial stress and siliconSilicon deformation during thermal cyclingThermal cycling. This study establishes a time-resolved correlation framework linking interfacial shear stressInterfacial shear stress behavior to Z-directional warpage of the siliconSilicon die. Three shear-based metrics are formulated: the Shear Amplification Index, capturing zonal stress escalation; the Shear Spread Index, quantifying spatial imbalance; and the Shear Peak Index, identifying maximum local shear intensity. Each metric is computed at every timestep across five interconnect heights using transient finite element simulationsFinite element simulation. Warpage is extracted concurrently and correlated with each metric using Pearson correlation analysis. The results reveal height-sensitive and temporally evolving relationships that characterize how interfacial shear governs global deformation. This framework provides a scalable approach to quantify the mechanical coupling between interfaceInterface-level stress phenomena and system-level reliability outcomes in advanced 3D integrated packaging3D integrated packaging.

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Thermomechanical Correlation of Interfacial Shear and Warpage in Cu–Cu Bonded 3D Stacked Die Packages Thermal Cycling

  • 会议论文

  • 发表日期：

    2026年

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  • Yong Jie Wong,
  • Mohd Sharizal Abdul Aziz,
  • C. Y. Khor,
  • Kim Hoey Yeoh,
  • Chze Shen Ang,
  • Teng Hwang John Tan

摘要

Warpage in Cu–Cu bonded stacked die structures is governed by the interplay between interfacial stress and siliconSilicon deformation during thermal cyclingThermal cycling. This study establishes a time-resolved correlation framework linking interfacial shear stressInterfacial shear stress behavior to Z-directional warpage of the siliconSilicon die. Three shear-based metrics are formulated: the Shear Amplification Index, capturing zonal stress escalation; the Shear Spread Index, quantifying spatial imbalance; and the Shear Peak Index, identifying maximum local shear intensity. Each metric is computed at every timestep across five interconnect heights using transient finite element simulationsFinite element simulation. Warpage is extracted concurrently and correlated with each metric using Pearson correlation analysis. The results reveal height-sensitive and temporally evolving relationships that characterize how interfacial shear governs global deformation. This framework provides a scalable approach to quantify the mechanical coupling between interfaceInterface-level stress phenomena and system-level reliability outcomes in advanced 3D integrated packaging3D integrated packaging.