This work presents an energy-efficient method for synthesizing 5 N-purity (≥99.999%) cadmium telluride (CdTe)Cadmium telluride (CdTe) at significantly reduced temperaturesTemperature. Tellurium and cadmium (both ≥99.999% purity) are mixed in a molar ratio of 1:1.1 and subjected to pressurized smeltingPressurized smelting under 0.4–0.6 MPa in an inert atmosphere (N₂/Ar) at 450–500 °C for 60–150 min. The elevated pressure enables a > 300 °C reduction in synthesis temperatureTemperature compared to conventional methods (≥800 °C). The resulting CdTeCadmium telluride (CdTe) crude product is then purified under vacuum (1–20 Pa) at 450–500 °C for 30–90 min. Crucially, the process achieves a yield exceeding 98.5% post-purification (validated at 500 °C/0.5 MPa) while maintaining 99.999% purity. This represents a paradigm shift in CdTeCadmium telluride (CdTe) manufacturing, dramatically lowering energy consumption without compromising yield or purity for semiconductor applications (e.g., solar cells, radiation detectors).

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Synthesis of High-Purity Cadmium Telluride by Pressurized Smelting–Vacuum Purification

  • Jiarong Li,
  • Guozheng Zha,
  • Wenlong Jiang

摘要

This work presents an energy-efficient method for synthesizing 5 N-purity (≥99.999%) cadmium telluride (CdTe)Cadmium telluride (CdTe) at significantly reduced temperaturesTemperature. Tellurium and cadmium (both ≥99.999% purity) are mixed in a molar ratio of 1:1.1 and subjected to pressurized smeltingPressurized smelting under 0.4–0.6 MPa in an inert atmosphere (N₂/Ar) at 450–500 °C for 60–150 min. The elevated pressure enables a > 300 °C reduction in synthesis temperatureTemperature compared to conventional methods (≥800 °C). The resulting CdTeCadmium telluride (CdTe) crude product is then purified under vacuum (1–20 Pa) at 450–500 °C for 30–90 min. Crucially, the process achieves a yield exceeding 98.5% post-purification (validated at 500 °C/0.5 MPa) while maintaining 99.999% purity. This represents a paradigm shift in CdTeCadmium telluride (CdTe) manufacturing, dramatically lowering energy consumption without compromising yield or purity for semiconductor applications (e.g., solar cells, radiation detectors).